МТД9-3-200-12 SCR-module DATASHEET

DATASHEET SEARCH FORM

МТД9-3-200-12 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 200 A
Maximum RMS on-state current IT(RMS) 314 A
Non repetitive surge peak on-state current ITSM 5500 A
Critical repetitive rate of rise of on-state current dI/dt 200 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 0.76 K/W
Junction to case thermal resistance RTH(j-c) 0.13 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.65 V
Triggering gate current IGT 180 mA
Holding current IH 160 mA

МТД9-3-200-12 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

МТД9-3-200-12 Datasheet. Page #1

МТД9-3-200-12
 datasheet

Page #2

МТД9-3-200-12
 datasheet #2

Description

Ìîäóëè òèðèñòîðíûå è êîìáèíèðîâàííûå ÌÎÄÓËÈ ÒÈÐÈÑÒÎÐÍÛÅ È ÊÎÌÁÈÍÈÐÎÂÀÍÍÛÅ ÌTT9/3-200, ÌTT9/3-250 ÌTÄ9/3-200, ÌTÄ9/3-250 ÌÄÒ9/3-200, ÌÄÒ9/3-250 сняты с производства, рекомендуется заменить на МТТ10/3 Ìîäóëè òèðèñòîðíûå è êîìáèíèðîâàííûå ñîñòîÿò èç äâóõ ñèëîâûõ ïîëóïðîâîäíèêîâûõ ýëåìåíòîâ: