МТТ10-3-200-9 SCR-module DATASHEET

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МТТ10-3-200-9 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 900 V
Maximum average on-state current IT(AVR) 200 A
Maximum RMS on-state current IT(RMS) 314 A
Non repetitive surge peak on-state current ITSM 5500 A
Critical repetitive rate of rise of on-state current dI/dt 200 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 0.77 K/W
Junction to case thermal resistance RTH(j-c) 0.12 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.55 V
Triggering gate current IGT 250 mA
Holding current IH 300 mA

МТТ10-3-200-9 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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Description

Модули тиристорные и комбинированные Модули тиристорные и комбинированные МОДУЛИ ТИРИСТОРНЫЕ И КОМБИНИРОВАННЫЕ МTT10/3-200, МДT10/3-200, МTД10/3-200, МТТ10/4-200, МТТ10/5-200, МTT10/3-250, МДT10/3-250, МTД10/3-250, МТТ10/4-250, МТТ10/5-250, МTT10/3-320, МДT10/3-320, МTД10/3-320, МТТ10/4-320, МТТ10/5-320 Модули тиристорные и ком