Т673-2500-16 SCR DATASHEET

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Т673-2500-16 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1600 V
Maximum average on-state current IT(AVR) 2500 A
Maximum RMS on-state current IT(RMS) 3925 A
Non repetitive surge peak on-state current ITSM 60500 A
Critical repetitive rate of rise of on-state current dI/dt 800 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -60..125 °C
Junction to ambient thermal resistance RTH(j-a) 0.21 K/W
Junction to case thermal resistance RTH(j-c) 0.01 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 300 mA
Holding current IH 300 mA

Т673-2500-16 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
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Т673-2500-16
 datasheet

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Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò273-1600, Ò273-2000, T273-2500 Ò673-1600, Ò673-2000, T673-2500 75±1 75±1 Вывод анода 120 max 110 max Вывод управляющего электрода 3.5 х2.3 min 2 отв. Дополнительный вывод катода Ðазмеры, мм Масса, г, Òип тиристора Усилие сжатия, Н А L1min L2min не более Т273-1600,