1000PT12C0 SCR DATASHEET

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1000PT12C0 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 2 W
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 1000 A
Maximum RMS on-state current IT(RMS) 2000 A
Non repetitive surge peak on-state current ITSM 17800 A
Critical repetitive rate of rise of on-state current dI/dt 1000 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.04 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.62 V
Triggering gate current IGT 300 mA
Holding current IH 600 mA

1000PT12C0 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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1000PT12C0 Datasheet. Page #1

1000PT12C0
 datasheet

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1000PT12C0
 datasheet #2

Description

RoHS RoHS SEMICONDUCTOR RoHS 1000PT Series RoHS SEMICONDUCTOR Fig. 1 Fig. 2 Peak on-state voltage Vs. Peak on-state Current Max. Junction to heatsink thermal impedance Vs. Time 3 0.03 2.5 0.02 2 Tj = 125 C 1.5 0.01 1 0.5 0 100 1000 10000 0.001 0.01 0.1 1 10 Instantaneous on-state current , A Time , S Fig. 3 Fig. 4 Max. Power Dissipation Vs. Mean on-state Current Max. heatsink Temperature Vs. Mean on-state Current 2500 140 120 180 0 180 0 2000 180 120 100