100NT-160 SCR DATASHEET

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100NT-160 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1600 V
Maximum average on-state current IT(AVR) 100 A
Maximum RMS on-state current IT(RMS) 157 A
Non repetitive surge peak on-state current ITSM 2020 A
Critical repetitive rate of rise of on-state current dI/dt 200 A/µs
Critical rate of rise of off-state voltage dV/dt 100 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -60..125 °C
Junction to case thermal resistance RTH(j-c) 0.36 K/W
Triggering gate voltage VGT 1.9 V
Peak on-state voltage drop VTM 1.39 V
Triggering gate current IGT 150 mA
Holding current IH 150 mA
Package TO-209AC

100NT-160 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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100NT-160 Datasheet. Page #1

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 datasheet #2

Description

100NT Naina Semiconductor emiconductor Ltd. Phase Control Thyristors Phase Control Thyristors (Stud Type), 100A Features • Improved glass passivation for high reliability glass passivation for high reliability • Exceptional stability at high temperatures Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance Electrical Ratings (T = 250C, unless otherwise noted) C, unless otherwise