100NT3 SCR-module DATASHEET

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100NT3 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum peak gate power PGM 1 W
Maximum repetitive peak and off-state voltage VDRM 300 V
Maximum average on-state current IT(AVR) 100 A
Maximum RMS on-state current IT(RMS) 157 A
Non repetitive surge peak on-state current ITSM 3300 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 50 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -30..150 °C
Junction to case thermal resistance RTH(j-c) 0.3 K/W
Holding current IH 70 mA

100NT3 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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100NT3 Datasheet. Page #1

100NT3
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Description

100NT3 Naina Semiconductor emiconductor Ltd. Non Non-isolated Thyristor Module Features • Low voltage three-phase • High surge current of 2500A @ 60Hz • Easy construction • Non-isolated • Mounting base as common anode Voltage Ratings (TC = 25OC unless otherwise specified) unless otherwise specified) Parameter Symbol Values Units Maximum repetitive peak VRRM 300 V reverse voltage Maximum non-repetitive VRSM 360 V peak reverse voltage Maximum repet