10RIA60S90 SCR DATASHEET

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10RIA60S90 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 8 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 10 A
Maximum RMS on-state current IT(RMS) 25 A
Non repetitive surge peak on-state current ITSM 225 A
Critical repetitive rate of rise of on-state current dI/dt 200 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -65..125 °C
Junction to case thermal resistance RTH(j-c) 1.85 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.75 V
Triggering gate current IGT 60 mA
Holding current IH 130 mA
Package TO-208AA

10RIA60S90 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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10RIA60S90 Datasheet. Page #1

10RIA60S90
 datasheet

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Description

10RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 10 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature RoHS COMPLIANT • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available • Types up to 1200 V VDRM/VRRM • RoHS compliant TO-208AA (TO-48) • Designed and qualified for industrial and consumer level TYPICAL APPLICATION