130NT3 SCR-module DATASHEET

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130NT3 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum peak gate power PGM 1 W
Maximum repetitive peak and off-state voltage VDRM 300 V
Maximum average on-state current IT(AVR) 130 A
Maximum RMS on-state current IT(RMS) 204 A
Non repetitive surge peak on-state current ITSM 3300 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 50 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -30..150 °C
Junction to case thermal resistance RTH(j-c) 0.25 K/W
Holding current IH 70 mA

130NT3 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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130NT3 Datasheet. Page #1

130NT3
 datasheet

Page #2

130NT3
 datasheet #2

Description

13 130NTD Naina Semiconductor emiconductor Ltd. Thyristor Thyristor – Diode Module Features • Improved glass passivation for high reliability Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Maximum Ratings (TA = 250C unless otherwise noted) C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current @ TJ = IF(AV) 130 A 850