1450PTH18D40 SCR DATASHEET

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1450PTH18D40 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1800 V
Maximum average on-state current IT(AVR) 1450 A
Non repetitive surge peak on-state current ITSM 22000 A
Critical repetitive rate of rise of on-state current dI/dt 60 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..150 °C
Junction to case thermal resistance RTH(j-c) 0.02 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.8 V
Triggering gate current IGT 300 mA
Holding current IH 1000 mA

1450PTH18D40 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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1450PTH18D40
 datasheet

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Description

SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR