2310PT04D0 SCR DATASHEET

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2310PT04D0 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 3 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum average on-state current IT(AVR) 2310 A
Maximum RMS on-state current IT(RMS) 4150 A
Non repetitive surge peak on-state current ITSM 42500 A
Critical repetitive rate of rise of on-state current dI/dt 1000 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.04 K/W
Triggering gate voltage VGT 1.1 V
Peak on-state voltage drop VTM 1.44 V
Triggering gate current IGT 100 mA
Holding current IH 300 mA
Package TO-200AC

2310PT04D0 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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2310PT04D0 Datasheet. Page #1

2310PT04D0
 datasheet

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2310PT04D0
 datasheet #2

Description

RoHS 2310PT Series RoHS SEMICONDUCTOR Nell High Power Products Phase Control Thyristors (Hockey PUK Version), 2310A FEATURES Center amplifying gate Metal case with ceramic insulator TO-200AC (K-PUK), Nell’s D-type Capsule lnternational standard case Compliant to RoHS Designed and qualified for industrial level TO-200AC(K-PUK) TYPICAL APPLICATIONS (Nell’s D-type Capsule) DC motor controls Controlled DC power supplies AC controllers PRODUCT SUMMARY IT(AV) 23