25TTS08PBF SCR DATASHEET

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25TTS08PBF ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 8 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 16 A
Maximum RMS on-state current IT(RMS) 25 A
Non repetitive surge peak on-state current ITSM 300 A
Critical repetitive rate of rise of on-state current dI/dt 150 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 62 K/W
Junction to case thermal resistance RTH(j-c) 1.1 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.25 V
Triggering gate current IGT 45 mA
Holding current IH 100 mA
Package TO-220AB

25TTS08PBF Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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25TTS08PBF Datasheet. Page #1

25TTS08PBF
 datasheet

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25TTS08PBF
 datasheet #2

Description

25TTS...PbF High Voltage Series Vishay High Power Products Phase Control SCR, 25 A DESCRIPTION/FEATURES 2 (A) The 25TTS.. High Voltage Series of silicon Available controlled rectifiers are specifically designed for RoHS* medium power switching and phase control COMPLIANT applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. TO-220AB 1 (K) (G) 3 Typical applications are in input rectification (soft start) and these produ