2N2322 SCR DATASHEET

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2N2322 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 25 V
Maximum RMS on-state current IT(RMS) 1.6 A
Non repetitive surge peak on-state current ITSM 15 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.5 V
Triggering gate current IGT 200 mA
Package TO-205AD

2N2322 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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2N2322 Datasheet. Page #1

2N2322
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2N2322
 datasheet #2

Description

2n2322 to 2n2326 SILICON THYRISTORS SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol Ratings 2N2322 2N2323 2N2324 2N2325 2N2326 Unit Peak reverse blocking voltage VRRM(REP) 25 50 100 150 200 V (*) VRSM(NON- Non-repetitive peak blocking 40 75 150 225 300 V reverse voltage (t<5.0 ms) REP) Forward Current RM