2N2327 SCR DATASHEET

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2N2327 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.1 W
Maximum repetitive peak and off-state voltage VDRM 250 V
Maximum average on-state current IT(AVR) 1 A
Maximum RMS on-state current IT(RMS) 1.6 A
Non repetitive surge peak on-state current ITSM 15 A
Maximum operating junction and storage temperature range Tstg, Tj -65..125 °C
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.5 V
Triggering gate current IGT 0.2 mA
Holding current IH 2 mA
Package TO-205AD

2N2327 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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Description

2N2327 thur 2N2329 SILICON THYRISTORS SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol Ratings 2N2327 2N2328 2N2329 Unit VRSM(REP) Peak reverse blocking voltage (1) 250 300 400 V VRSM(NON- Non-repetitive peak blocking reverse 350 400 500 V voltage (t<5.0 ms) REP) Forward Current RMS IT(RMS) 1.6 A (all cond