2N6075B Triac DATASHEET

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2N6075B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 30 A
Triggering gate voltage VGT 2.5 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 3 mA
Holding current IH 15 mA
Package TO-225

2N6075B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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2N6075B Datasheet. Page #1

2N6075B
 datasheet

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2N6075B
 datasheet #2

Description

DATA SHEET 2N6071, A, B 2N6073, A, B 2N6075, A, B SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS TO-126 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6071, A, B series types are silicon sensitive gate triacs designed for such applications as light dimmers, motor controls, heating controls, and power supplies. MAXIMUM RATINGS (TJ=25°C unless otherwise noted) 2N6071 2N6073 2N6075 2N6071A 2N6073A 2N6075A SYMBOL 2N6071B 2N6073B 2N6075B UNITS Peak Repetitive Off-State