2N6160 Triac DATASHEET

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2N6160 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum RMS on-state current IT(RMS) 30 A
Non repetitive surge peak on-state current ITSM 250 A
Triggering gate voltage VGT 2.5 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 60 mA
Holding current IH 80 mA
Package TO-208AA

2N6160 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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2N6160 Datasheet. Page #1

2N6160
 datasheet

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2N6160
 datasheet #2

Description

DI GI TRON S EMI CONDUCTORS 2N6157-2N6165 SILICON BIDIRECTIONAL THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak repetitive off-state voltage (TJ = -65 to +125°C) (1/2 sine wave 50 to 60Hz, gate open) VDRM Volts 2N6157, 2N6160, 2N6163 200 2N6