2N6400G SCR DATASHEET

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2N6400G ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 50 V
Maximum RMS on-state current IT(RMS) 16 A
Non repetitive surge peak on-state current ITSM 160 A
Triggering gate voltage VGT 1.5 V
Triggering gate current IGT 0.03 mA
Package TO-220

2N6400G Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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2N6400G
 datasheet

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2N6400G
 datasheet #2

Description

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6400/D 2N6400 thru Silicon Controlled Rectifiers 2N6405 Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, SCRs heating controls and power supplies; or wherever half–wave silicon gate–controlled, 16 AMPERES RMS solid–state devices are needed. 50 thru 800 VOLTS • Glass Passivated Junctions with Center Gate Geometry for Greater Parameter