2N6605 SCR DATASHEET

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2N6605 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 30 V
Non repetitive surge peak on-state current ITSM 6 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 200 mA
Holding current IH 5 mA
Package TO-206AA

2N6605 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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2N6605 Datasheet. Page #1

2N6605
 datasheet

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2N6605
 datasheet #2

Description

2N6605 2N6606 2N6607 www.centralsemi.com 2N6608 DESCRIPTION: SILICON CONTROLLED RECTIFIER The CENTRAL SEMICONDUCTOR 2N6605 Series 0.35 AMP, 30 THRU 200 VOLTS types are hermetically sealed silicon controlled rectifiers manufactured in a TO-18 case, designed for control systems and sensing circuit applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6605 2N6606 2N6607 2N6608 UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 200 V