2N690 SCR DATASHEET

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2N690 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.5 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 16 A
Maximum RMS on-state current IT(RMS) 25 A
Non repetitive surge peak on-state current ITSM 150 A
Critical repetitive rate of rise of on-state current dI/dt 10 A/µs
Critical rate of rise of off-state voltage dV/dt 50 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -65..125 °C
Junction to case thermal resistance RTH(j-c) 1.7 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 40 mA
Holding current IH 0.05 mA
Package TO-208AA

2N690 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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Description

Discrete Semiconductors Semitronics C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes / 25-800 Volts Silicon Controlled Rectifiers (SCR) are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control applications. They are all-diffused devices backed by years of design and field experience. Features • Low Gate Current • Low On-State Voltage • Hermetic Packaging Outline Drawing • Low Thermal Impeda