3000PT20E0 SCR DATASHEET

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3000PT20E0 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 10 W
Maximum repetitive peak and off-state voltage VDRM 2000 V
Maximum average on-state current IT(AVR) 3000 A
Maximum RMS on-state current IT(RMS) 3790 A
Non repetitive surge peak on-state current ITSM 49900 A
Critical repetitive rate of rise of on-state current dI/dt 400 A/µs
Critical rate of rise of off-state voltage dV/dt 200 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.01 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 2.2 V
Triggering gate current IGT 300 mA
Holding current IH 300 mA

3000PT20E0 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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3000PT20E0 Datasheet. Page #1

3000PT20E0
 datasheet

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3000PT20E0
 datasheet #2

Description

RoHS 3000PT Series RoHS SEMICONDUCTOR RoHS 3000PT Series RoHS SEMICONDUCTOR Fig. 1 Fig. 2 Peak on-state voltage Vs. Peak on-state Current Max. Junction to heatsink thermal impedance Vs. Time 0.018 2 0.015 1.6 0.012 Tj = 125 C 0.009 1.2 0.006 0.8 0.003 0 0.4 0.001 0.01 0.1 1 10 100 1000 10000 Instantaneous on-state current , A Time , S Fig. 3 Fig. 4 Max. Power Dissipation Vs. Mean on-state Current Max. heatsink Temperature Vs. Mean on-state Current 4500 140 18