50RIA10S90 SCR DATASHEET

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50RIA10S90 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 10 W
Maximum repetitive peak and off-state voltage VDRM 100 V
Maximum average on-state current IT(AVR) 50 A
Maximum RMS on-state current IT(RMS) 80 A
Non repetitive surge peak on-state current ITSM 1430 A
Critical repetitive rate of rise of on-state current dI/dt 200 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.35 K/W
Triggering gate voltage VGT 2.5 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 100 mA
Holding current IH 200 mA
Package TO-208AC

50RIA10S90 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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50RIA10S90 Datasheet. Page #1

50RIA10S90
 datasheet

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50RIA10S90
 datasheet #2

Description

50RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 50 A FEATURES • High current rating RoHS • Excellent dynamic characteristics COMPLIANT • dV/dt = 1000 V/µs option • Superior surge capabilities • Standard package • Metric threads version available • Types up to 1200 V VDRM/VRRM TO-208AC (TO-65) • RoHS compliant TYPICAL APPLICATIONS • Phase control applications in converters PRODUCT SUMMARY • Lighting circuits IT(AV) 50 A