56NTD-120 SCR-module DATASHEET

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56NTD-120 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 56 A
Maximum RMS on-state current IT(RMS) 130 A
Non repetitive surge peak on-state current ITSM 1300 A
Critical rate of rise of off-state voltage dV/dt 300 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -65..125 °C
Junction to case thermal resistance RTH(j-c) 0.55 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.2 V
Triggering gate current IGT 100 mA
Holding current IH 100 mA
Package M1-A

56NTD-120 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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56NTD-120 Datasheet. Page #1

56NTD-120
 datasheet

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 datasheet #2

Description

56NTD Naina Semiconductor emiconductor Ltd. Thyristor Thyristor – Diode Module Features • Improved glass passivation for high reliability Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Maximum Ratings (TA = 250C unless otherwise noted) C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current @ TJ = IF(AV) 56 A 850C Ma