70NTT-140 SCR-module DATASHEET

DATASHEET SEARCH FORM

70NTT-140 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1400 V
Maximum average on-state current IT(AVR) 70 A
Maximum RMS on-state current IT(RMS) 160 A
Non repetitive surge peak on-state current ITSM 1500 A
Critical rate of rise of off-state voltage dV/dt 300 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -65..125 °C
Junction to case thermal resistance RTH(j-c) 0.45 K/W
Triggering gate voltage VGT 2 V
Triggering gate current IGT 100 mA
Holding current IH 100 mA
Package M1-A

70NTT-140 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

70NTT-140 Datasheet. Page #1

70NTT-140
 datasheet

Page #2

70NTT-140
 datasheet #2

Description

70NTT Naina Semiconductor Ltd. Thyristor – Thyristor Module, 70A Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Maximum Ratings (TA = 250C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current @ TJ = IF(AV) 70 A 850C Maximum average RMS forward current IF(RMS) 160 A Maximum non-repetitive surge current IFSM