70PT10D SCR DATASHEET

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70PT10D ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 2 W
Maximum repetitive peak and off-state voltage VDRM 1000 V
Maximum average on-state current IT(AVR) 70 A
Maximum RMS on-state current IT(RMS) 75 A
Non repetitive surge peak on-state current ITSM 1300 A
Critical repetitive rate of rise of on-state current dI/dt 150 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 45 K/W
Junction to case thermal resistance RTH(j-c) 0.32 K/W
Triggering gate voltage VGT 1.5 V
Peak on-state voltage drop VTM 1.55 V
Triggering gate current IGT 80 mA
Holding current IH 130 mA
Package TO-247

70PT10D Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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70PT10D Datasheet. Page #1

70PT10D
 datasheet

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70PT10D
 datasheet #2

Description

RoHS 70PT Series RoHS SEMICONDUCTOR Stansard SCRs, 70A Main Features Symbol Value Unit IT(RMS) A 75 VDRM/VRRM 800 to 1800 V IGT 100 mA DESCRIPTION The 70PT series of silicon controlled rectifiers are 1 high performance glass passivated technology, 2 3 and are suitable for general purpose applications, 2(A) where power handling and power dissipation are TO-247S (non-Insulated) critical, such as solid state relay, welding equipment 3(G) high power motor control,