804DCR-60 SCR DATASHEET

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804DCR-60 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 800 A
Maximum RMS on-state current IT(RMS) 1256 A
Non repetitive surge peak on-state current ITSM 12000 A
Critical repetitive rate of rise of on-state current dI/dt 200 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.04 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 200 mA
Holding current IH 300 mA
Package TO-200AC

804DCR-60 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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Description

8 804DCR Naina Semiconductor emiconductor Ltd. Phase Control Control Thyristors (Capsule Type) Features • Metal case with ceramic insulator • High current rating • Bifacial cooled • Center gate trigger Applications • DC motor controls • AC controllers TO-200AC (B-PUK) 200A • DC power supplies Voltage Ratings VDRM/VRRM, Maximum Repetitive peak VRSM, Maximum non- IDRM/IRRM, Maximum at TJ = , Maximum Repetitive peak Type Voltage & off-state vol