AT706 SCR DATASHEET

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AT706 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 150 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 4305 A
Non repetitive surge peak on-state current ITSM 70 A
Critical repetitive rate of rise of on-state current dI/dt 320 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -30..125 °C
Triggering gate voltage VGT 3.5 V
Peak on-state voltage drop VTM 1.5 V
Triggering gate current IGT 250 mA
Holding current IH 300 mA

AT706 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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Description

Беларусь г.Минск тел./факс 8(017)200-56-46 электронные компоненты радиодетали www.fotorele.net e:mail minsk17@tut.by POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY POSEICO Tel. +39 010 6556234 - Fax +39 010 6557519 POSEICO SPA Sales Office: POwer SEmiconductors Italian COrporation Tel. +39 010 6556775 - Fax +39 010 6445141 PHASE CONTROL THYRISTOR AT706 Repetitive voltage up to 800 V Mean on-state current 4305 A Surge current