BCR1002N3 SCR DATASHEET

DATASHEET SEARCH FORM

BCR1002N3 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.1 W
Maximum repetitive peak and off-state voltage VDRM 50 V
Maximum RMS on-state current IT(RMS) 200 A
Triggering gate voltage VGT 0.8 V
Package SOT-23

BCR1002N3 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

BCR1002N3 Datasheet. Page #1

BCR1002N3
 datasheet

Page #2

BCR1002N3
 datasheet #2

Description

Spec. No. : C700N3 Issued Date : 2008.02.25 CYStech Electronics Corp. Revised Date :2014.01.24 Page No. : 1/7 PNPN Epitaxial Planar SCR BCR1002N3 Descriptions The BCR1002N3 is designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features • Practical level triggering and holding characteristics • On state current rating of 0.2A RMS