BRY55-400 SCR DATASHEET

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BRY55-400 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.1 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 0.8 A
Non repetitive surge peak on-state current ITSM 8 A
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 200 K/W
Junction to case thermal resistance RTH(j-c) 75 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 0.2 mA
Holding current IH 5 mA
Package TO-92

BRY55-400 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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BRY55-400 Datasheet. Page #1

BRY55-400
 datasheet

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BRY55-400
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Description

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BRY55-30/D BRY55-30* Silicon Controlled Rectifiers thru 600* PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92) package which is readily adaptable for use in automatic insertion equipment. SCRs • Sensitive Gate Trigger Current