BT131W-500 Triac DATASHEET

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BT131W-500 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 5 W
Maximum repetitive peak and off-state voltage VDRM 500 V
Maximum RMS on-state current IT(RMS) 1 A
Non repetitive surge peak on-state current ITSM 10 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 15 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 156 K/W
Triggering gate voltage VGT 0.7 V
Peak on-state voltage drop VTM 1.2 V
Triggering gate current IGT 3 mA
Holding current IH 5 mA
Package SOT-223

BT131W-500 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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BT131W-500 Datasheet. Page #1

BT131W-500
 datasheet

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BT131W-500
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Description

Philips Semiconductors Product specification Triacs BT131W series logic level GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT131W- 500 600 general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and phase control IT(RMS) RMS on-state current 1 1 A applications. These devices are ITSM Non-repetitive peak on-st