BT151-800R SCR DATASHEET

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BT151-800R ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.5 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 8 A
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 100 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 60 K/W
Junction to case thermal resistance RTH(j-c) 1.3 K/W
Triggering gate voltage VGT 0.6 V
Peak on-state voltage drop VTM 1.75 V
Triggering gate current IGT 2 mA
Holding current IH 7 mA
Package TO-220

BT151-800R Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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BT151-800R Datasheet. Page #1

BT151-800R
 datasheet

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BT151-800R
 datasheet #2

Description

BT151-800R SCR, 12 A, 15mA, 800 V, SOT78 Rev. 05 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability High thermal cycling performance High surge current capability 1.3 Applications Ignition circuits Protection Circuits Motor control Static switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditio