BTA04 Triac DATASHEET

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BTA04 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 4 A
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 30 A
Critical repetitive rate of rise of on-state current dI/dt 10 A/µs
Critical rate of rise of off-state voltage dV/dt 10 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 60 K/W
Junction to case thermal resistance RTH(j-c) 3.3 K/W
Triggering gate voltage VGT 1.5 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 5 mA
Holding current IH 15 mA
Package TO-220F

BTA04 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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Description

BTA04 双向可控硅/TRIAC 用途:用于需要高灵敏度触发的场合。 Purpose: General purpose applications where gate high sensitivity required. 特点:低控制极触发电流。 Features: Low gate triggering current. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 测试条件 数值 单位 Symbol Test condition Rating Unit V /V Tj=110℃ 600 V DRM RRM I T =90℃ 4.0 A T(RMS) C tp=8.3ms 42 A I TSM tp=10ms 40 A I2t tp=10ms 8.0 A2s Rep