BTA316X-600E Triac DATASHEET

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BTA316X-600E ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 0.5 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 150 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 60 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 55 K/W
Junction to case thermal resistance RTH(j-c) 4 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.5 V
Triggering gate current IGT 10 mA
Holding current IH 15 mA
Package TO-220F

BTA316X-600E Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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BTA316X-600E Datasheet. Page #1

BTA316X-600E
 datasheet

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 datasheet #2

Description

BTA316X-600E 3Q Hi-Com Triac 5 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package. The "series E" triac balances the requirements of commutation performance and gate sensitivity. The "sensitive gate" "series E" is intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits • 3Q technology for improved noise immunity • Direct interfacing with