# BTA416Y-800B Triac DATASHEET

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PARAMETER | SYMBOL | VALUES | UNITS |
---|---|---|---|

Type | Triac | ||

Maximum peak gate power | P_{GM} |
0.5 | W |

Maximum repetitive peak and off-state voltage | V_{DRM} |
800 | V |

Maximum RMS on-state current | I_{T(RMS)} |
16 | A |

Non repetitive surge peak on-state current | I_{TSM} |
160 | A |

Critical repetitive rate of rise of on-state current | dI/dt | 100 | A/µs |

Critical rate of rise of off-state voltage | dV/dt | 600 | V/µs |

Maximum operating junction and storage temperature range | T_{stg}, T_{j} |
-40..150 | °C |

Junction to ambient thermal resistance | R_{TH(j-a)} |
60 | K/W |

Junction to case thermal resistance | R_{TH(j-c)} |
1.9 | K/W |

Triggering gate voltage | V_{GT} |
0.7 | V |

Peak on-state voltage drop | V_{TM} |
1.5 | V |

Triggering gate current | I_{GT} |
50 | mA |

Holding current | I_{H} |
60 | mA |

Package | TO-220AB |

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BTA416Y-800B 3Q Hi-Com Triac 10 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high Tj operating capability and an internally isola