BTB04-600 Triac DATASHEET

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BTB04-600 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 42 A
Maximum operating junction and storage temperature range Tstg, Tj -40..150 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Triggering gate voltage VGT 1.5 V
Peak on-state voltage drop VTM 1.65 V
Triggering gate current IGT 10 mA
Holding current IH 25 mA
Package TO-220

BTB04-600 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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BTB04-600 Datasheet. Page #1

BTB04-600
 datasheet

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BTB04-600
 datasheet #2

Description

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Thyristors TO-220-3L BTB04 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit 3. GATE 4 A IT(RMS) BTB04-400 BTB04-600 VDRM/VRRM V 400 600 5 to 25 mA IGT DESCRIPTION The BTB04 triac family are high performance glass passivated PNPN devices.These parts are suitables for general purpose applications where gate high sensitivity is required.Application on 4Q such as phase cont