BTB12-800SW Triac DATASHEET

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BTB12-800SW ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 1 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 12 A
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 120 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 20 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -55..150 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Triggering gate voltage VGT 1.3 V
Peak on-state voltage drop VTM 1.55 V
Triggering gate current IGT 10 mA
Holding current IH 15 mA
Package TO-220

BTB12-800SW Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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BTB12-800SW
 datasheet

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 datasheet #2

Description

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate ThyristorS BTB12 3Q TRIAC TO-220-3L FEATURE High Blocking Voltage Capability 1.MAIN TERMINAL1 High Surge Current Capability 2.MAIN TERMINAL2 High Commutation Performances 3.GATE Uniform Gate Trigger Currents in Three Quadrants Medium Current Triac APPLICATION General purpose AC switching Motor control, static relays, light dimmers and appliance motors speed controll