C103B SCR DATASHEET

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C103B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum RMS on-state current IT(RMS) 0.8 A
Non repetitive surge peak on-state current ITSM 8 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.5 V
Triggering gate current IGT 200 mA
Holding current IH 5 mA
Package TO-92

C103B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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C103B Datasheet. Page #1

C103B
 datasheet

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C103B
 datasheet #2

Description

DATA SHEET C103Y C103YY C103A C103B SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL C103Y C103YY C103A C103B UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 200 V RMS On-State Current (TC=60°C) IT(RMS) 0.8 A Pea