C106B1 SCR DATASHEET

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C106B1 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 20 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 2.2 V
Triggering gate current IGT 200 mA
Package TO-202

C106B1 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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C106B1 Datasheet. Page #1

C106B1
 datasheet

Page #2

C106B1
 datasheet #2

Description

C106A1 C106D1 C106B1 C106E1 C106C1 C106M1 www.centralsemi.com DESCRIPTION: SILICON CONTROLLED RECTIFIER The CENTRAL SEMICONDUCTOR C106A1 series 4 AMP, 100 THRU 600 VOLTS are PNPN silicon controlled rectifiers designed for applications such as temperature, light, speed control, process and remote control, and warning systems where reliability of operation is important. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) C106 C106 C106 C1