C106D DATASHEET

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C106D ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum average on-state current IT(AVR) 2.55 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 2.2 V
Triggering gate current IGT 6 mA
Package TO-225_TO-225F_TO-251

C106D Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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C106D Datasheet. Page #1

C106D
 datasheet

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C106D
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Description

C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer http://onsemi.com applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. SCRs Features 4 A RMS, 200 - 600 Volts • Glassivated Surface for Reliability and Uniformity • Power Rated at Economical Prices • Practical Leve