CLB30I1200PZ SCR DATASHEET

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CLB30I1200PZ ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 30 A
Maximum RMS on-state current IT(RMS) 47 A
Non repetitive surge peak on-state current ITSM 325 A
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj ..150 °C
Junction to case thermal resistance RTH(j-c) 0.5 K/W
Package TO-263AB

CLB30I1200PZ Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CLB30I1200PZ Datasheet. Page #1

CLB30I1200PZ
 datasheet

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CLB30I1200PZ
 datasheet #2

Description

CLB30I1200PZ VRRM = 1200 V High Efficiency Thyristor ITAV = 30 A VT = 1,27 V Single Anode Gated Thyristor Part number CLB30I1200PZ Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Industry standard outline ● Planar passivated chip ● Softstart AC motor control ● RoHS compliant ● Long-term stability ● DC Motor control ● Epoxy meets UL 94V-0 ● Thyristor can be use