CQ220-12D Triac DATASHEET

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CQ220-12D ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 40 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 125 A
Critical repetitive rate of rise of on-state current dI/dt 10 A/µs
Critical rate of rise of off-state voltage dV/dt 100 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 60 K/W
Junction to case thermal resistance RTH(j-c) 2.7 K/W
Triggering gate voltage VGT 1.5 V
Peak on-state voltage drop VTM 1.5 V
Triggering gate current IGT 25 mA
Holding current IH 25 mA
Package TO-220

CQ220-12D Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CQ220-12D Datasheet. Page #1

CQ220-12D
 datasheet

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CQ220-12D
 datasheet #2

Description

TM CQ220-12B CQ220-12D Central CQ220-12M Semiconductor Corp. CQ220-12N 12 AMP TRIAC DESCRIPTION: 200 THRU 800 VOLTS The CENTRAL SEMICONDUCTOR CQ220-12B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ220 CQ220 CQ220 CQ220 -12B -12D -12M -12N UNITS Peak Repetitive Off-State Volta