CQ223-2M Triac DATASHEET

DATASHEET SEARCH FORM

CQ223-2M ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 2 A
Non repetitive surge peak on-state current ITSM 10 A
Triggering gate voltage VGT 1.8 V
Peak on-state voltage drop VTM 1.75 V
Triggering gate current IGT 0.01 mA
Holding current IH 5 mA
Package SOT-223

CQ223-2M Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

CQ223-2M Datasheet. Page #1

CQ223-2M
 datasheet

Page #2

CQ223-2M
 datasheet #2

Description

CQ223-2M CQ223-2N www.centralsemi.com SURFACE MOUNT DESCRIPTION: 2 AMP SILICON TRIAC The CENTRAL SEMICONDUCTOR CQ223-2M series 600 THRU 800 VOLTS type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ223-2M CQ223-2N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=