CQ223N Triac DATASHEET

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CQ223N ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 0.1 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 1 A
Non repetitive surge peak on-state current ITSM 10 A
Critical rate of rise of off-state voltage dV/dt 5 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 10 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 10 mA
Holding current IH 10 mA
Package SOT-223

CQ223N Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CQ223N Datasheet. Page #1

CQ223N
 datasheet

Page #2

CQ223N
 datasheet #2

Description

TM Central CQ223M CQ223N Semiconductor Corp. 1.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL CQ223M CQ223N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=80°C) IT (RMS) 1.0 A Peak One Cycle