CQ39DS Triac DATASHEET

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CQ39DS ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 3 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 35 A
Critical rate of rise of off-state voltage dV/dt 30 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 160 K/W
Junction to case thermal resistance RTH(j-c) 9 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 2.1 V
Triggering gate current IGT 5 mA
Holding current IH 5 mA
Package TO-205AD

CQ39DS Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

CQ39DS Datasheet. Page #1

CQ39DS
 datasheet

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CQ39DS
 datasheet #2

Description

DATA SHEET CQ39BS CQ39DS CQ39MS 4.0 AMP TRIAC 200 THRU 600 VOLTS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CQ39BS series type is a Hermetically Sealed Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL CQ39BS CQ39DS CQ39MS UNITS Peak Repetitive Off-State Voltage VDRM 200 400 600 V RMS On-State Current (TC=80°C) IT(RMS) 4.0 A Peak One