CQ89D Triac DATASHEET

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CQ89D ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 0.1 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 1 A
Non repetitive surge peak on-state current ITSM 10 A
Critical rate of rise of off-state voltage dV/dt 5 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 10 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 10 mA
Holding current IH 10 mA
Package SOT-89

CQ89D Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

CQ89D Datasheet. Page #1

CQ89D
 datasheet

Page #2

CQ89D
 datasheet #2

Description

TM CQ89D Central CQ89M Semiconductor Corp. CQ89N 1.0 AMP TRIAC DESCRIPTION: 400 THRU 800 VOLTS The CENTRAL SEMICONDUCTOR CQ89D series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL CQ89D CQ89M CQ89N UNITS Peak Repetitive Off-State Voltage VDRM 400 600 800 V RMS On-State Current (TC=80°C) IT (RMS) 1.0 A Peak