CQ92M Triac DATASHEET

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CQ92M ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 3 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 1 A
Non repetitive surge peak on-state current ITSM 20 A
Critical rate of rise of off-state voltage dV/dt 30 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 180 K/W
Junction to case thermal resistance RTH(j-c) 90 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.26 V
Triggering gate current IGT 5 mA
Holding current IH 5 mA
Package TO-92

CQ92M Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

CQ92M Datasheet. Page #1

CQ92M
 datasheet

Page #2

CQ92M
 datasheet #2

Description

TM CQ92B Central CQ92D Semiconductor Corp. CQ92M CQ92N TRIAC DESCRIPTION: 1.0 AMP, 200 THRU 800 VOLTS The CENTRAL SEMICONDUCTOR CQ92B Series are epoxy molded silicon Triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ92B CQ92D CQ92M CQ92N UNITS Peak Repetitive Off-State Voltage VDRM 200 400 600 800 V RMS On-State Curre