CQD-4M Triac DATASHEET

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CQD-4M ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 40 A
Triggering gate voltage VGT 1.75 V
Peak on-state voltage drop VTM 1.75 V
Triggering gate current IGT 0.01 mA
Holding current IH 5 mA
Package TO-252

CQD-4M Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CQD-4M Datasheet. Page #1

CQD-4M
 datasheet

Page #2

CQD-4M
 datasheet #2

Description

CQD-4M CQD-4N www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: TRIACS The CENTRAL SEMICONDUCTOR CQD-4M and 4.0 AMP, 600 THRU 800 VOLT CQD-4N are epoxy molded silicon TRIACs designed for full wave AC control applications featuring gate triggering in all four quadrants. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQD-4M CQD-4N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=80°C) IT(RMS)