CQDD-12N Triac DATASHEET

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CQDD-12N ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 80 A
Triggering gate voltage VGT 1.5 V
Peak on-state voltage drop VTM 1.5 V
Triggering gate current IGT 0.02 mA
Holding current IH 25 mA
Package TO-263

CQDD-12N Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CQDD-12N Datasheet. Page #1

CQDD-12N
 datasheet

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CQDD-12N
 datasheet #2

Description

CQDD-12M CQDD-12N www.centralsemi.com SURFACE MOUNT DESCRIPTION: 12 AMP SILICON TRIAC The CENTRAL SEMICONDUCTOR CQDD-12M series 600 THRU 800 VOLTS type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQDD-12M CQDD-12N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=9