CRD5AS-12B SCR DATASHEET

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CRD5AS-12B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 5 A
Non repetitive surge peak on-state current ITSM 90 A
Maximum operating junction and storage temperature range Tstg, Tj ..150 °C
Junction to case thermal resistance RTH(j-c) 3 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.8 V
Package TO-252

CRD5AS-12B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CRD5AS-12B Datasheet. Page #1

CRD5AS-12B
 datasheet

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CRD5AS-12B
 datasheet #2

Description

 Preliminary Datasheet CRD5AS-12B R07DS0503EJ0100 Reverse Conducting Thyristor Rev.1.00 Medium Power Use Jul 07, 2011 Features  IT (AV) : 5 A  Built-in reverse conducting diode  VDRM : 600 V  Planar Type  IGT: 100 A  The Product guaranteed maximum junction temperature 150C Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 1. Cathode 2. Anode 3 3. Gate 1 4. Anode 2 1 3 Applications Switching mode power supply, R