CS39-4N SCR DATASHEET

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CS39-4N ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 35 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.95 V
Triggering gate current IGT 200 mA
Holding current IH 5 mA
Package TO-205AD

CS39-4N Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CS39-4N Datasheet. Page #1

CS39-4N
 datasheet

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CS39-4N
 datasheet #2

Description

CS39-4B CS39-4D CS39-4M www.centralsemi.com CS39-4N DESCRIPTION: SILICON CONTROLLED RECTIFIER The CENTRAL SEMICONDUCTOR CS39-4B series 4 AMP, 200 THRU 800 VOLTS types are hermetically sealed silicon controlled rectifiers designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) CS39 CS39 CS39 CS39 SYMBOL -4B -4D -4M -4N UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600