CS55B SCR DATASHEET

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CS55B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum RMS on-state current IT(RMS) 0.8 A
Non repetitive surge peak on-state current ITSM 10 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 200 mA
Holding current IH 5 mA
Package TO-92

CS55B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CS55B Datasheet. Page #1

CS55B
 datasheet

Page #2

CS55B
 datasheet #2

Description

DATA SHEET CS55B CS55D SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CS55B series type are epoxy molded silicon controlled rectifiers designed for applications requiring a low gate sensitivity. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL CS55B CS55D UNITS Peak Repetitive Off-State Voltage VDRM,VRRM 200 400 V RMS On-State Current (TC=60oC) IT(RMS) 0.8 A Peak One Cycle Surge (t=10ms) ITSM 10 A I2