CS8-08IO2 SCR DATASHEET

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CS8-08IO2 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 10 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 16 A
Maximum RMS on-state current IT(RMS) 25 A
Non repetitive surge peak on-state current ITSM 250 A
Critical repetitive rate of rise of on-state current dI/dt 150 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 1.5 K/W
Triggering gate voltage VGT 2.5 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 30 mA
Holding current IH 80 mA
Package TO-208AB

CS8-08IO2 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CS8-08IO2
 datasheet

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 datasheet #2

Description

CS 8 Phase Control Thyristors VRRM = 800-1200 V IT(RMS) = 25 A IT(AV)M = 16 A 2 TO-64 VRSM VRRM Type VDSM VDRM 12 3 VV 3 900 800 CS 8-08io2 1300 1200 CS 8-12io2 1 M5 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions Maximum Ratings Features Thyristor for line frequencies IT(RMS) TVJ = TVJM 25 A International standard package IT(AV)M Tcase = 85°C; 180° sine 16 A JEDEC TO-64 Planar glassivated chip ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 250 A Long-term stabil